FIELD: microelectronics; production of photomask blanks for integrated circuit manufacture.
SUBSTANCE: proposed method for manufacturing photomask blanks designed to produce photomasks followed by transferring microimage pattern onto semiconductor wafer involves introduction of oxidant in the form of gaseous halogen into carrier gas while applying ferric oxide masking layer using oxidizing pyrolysis of iron pentacarbonyl so as to stabilize this process and make it more complete.
EFFECT: enhanced yield of masking films free from defects; reduced process temperature.
4 cl, 1 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD FOR MAKING PHOTO-TEMPLATE BLANKS | 2005 |
|
RU2292679C2 |
| METHOD FOR PRODUCING MASK TEMPLATES | 2005 |
|
RU2305918C2 |
| METHOD FOR PRODUCING PHOTOMASK BLANKS | 2005 |
|
RU2307423C2 |
| METHOD FOR PRODUCING MASK TEMPLATES | 2005 |
|
RU2308179C1 |
| METHOD OF PHOTO-TEMPLATE STOCKS PRODUCTION | 2006 |
|
RU2329565C1 |
| METHOD FOR PRODUCING PHOTO-TEMPLATE BODIES | 2004 |
|
RU2269213C1 |
| PROCESS OF PRODUCTION OF MASK WORKSTOCKS | 2001 |
|
RU2208920C1 |
| METHOD FOR PRODUCING PHOTOMASK BLANK | 2004 |
|
RU2274925C1 |
| AGENT FOR CLEANING SOLID SURFACE | 0 |
|
SU675069A1 |
| 0 |
|
SU466045A1 |
