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2 321 689

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IPC

C30B15/04(2006-01-01)

C30B29/28(2006-01-01)

H01S3/11(2006-01-01)

H01S3/16(2006-01-01)

(21) (22)

Application

2006103043/15, 2006-02-02

(24)

Start date

2006-02-02

(22)

Actual filing date

2006-02-02

(45)

Published

2008-04-10

(72)

Inventor

Titov Aleksandr NikolaevichKrutova Larisa IvanovnaVetrov Vasilij NikolaevichIgnatenkov Boris AleksandrovichMironov Igor' Alekseevich

(73)

Holder

Federal'Noe Gosudarstvennoe Unitarnoe Predprijatie I Tekhnologicheskij Institut Opticheskogo Materialovedenija Vserossijskogo Nauchnogo Tsentra Opticheskij Institut Im. S.I. Vavilova" Vnts Im. S.I. Vavilova")

METHOD OF GROWING OF GALLIUM-SCANDIUM-GADOLINIUM GARNETS FOR PASSIVE LASER SHUTTERS Russian patent published in 2008 - IPC C30B15/04 C30B29/28 H01S3/11 H01S3/16

Abstract RU 2321689 C2

FIELD: crystal growing technologies.

SUBSTANCE: invention relates to technology of growing crystals for passive laser shutters used in modern lasers operated in IR spectrum region. Crystals are grown according to Chokhralsky method from initial stock melt containing metal oxide mixture, namely produced via solid-phase synthesis gallium-scandium-gadolinium garnet of congruently melting composition with magnesium and chromium oxide additives assuring concentration of chromium and magnesium cations in melt 2.0·10²⁰ to 2.6·10²⁰ at/cm³. Process is carried out at cell pressure 1.4 atm in argon and carbon dioxide medium with carbon dioxide content 14-17% by volume. Invention makes it possible to grow perfect crystals of gallium-scandium-gadolinium garnets alloyed with chromium cations, which are characterized by absorption coefficient above 5 cm^-1 within wavelength 1.057-1.067 μm generation range.

EFFECT: achieved required Q-switching mode in continuous and pulsed operation conditions.

6 ex

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RU 2 321 689 C2

Authors

Titov Aleksandr Nikolaevich

Krutova Larisa Ivanovna

Vetrov Vasilij Nikolaevich

Ignatenkov Boris Aleksandrovich

Mironov Igor' Alekseevich

Dates

2008-04-10—Published

2006-02-02—Filed