METHOD FOR GROWING GADOLINIUM-SCANDIUM-ALUMINIUM GARNET CRYSTALS FOR PASSIVE LASER SHUTTERS Russian patent published in 2015 - IPC C30B15/04 C30B29/28 C30B33/02 H01S3/11 H01S3/16 

FIELD: chemistry.

SUBSTANCE: invention refers to crystal-growth technology for passive laser shutters used in state-of-the-art lasers and light radars operating in the range of 1.2-1.55 mcm. The crystals are grown by Czochralski method from the raw furnace charge melt, wherein the furnace charge is gadolinium-scandium-aluminium garnet Gd_2.88Sc_1.89Al₃V_0.03O₁₂ produced by solid-phase synthesis; vanadium is introduced in the form of oxide V₂O₅; the crystal growing process is performed in the argon medium at a chamber pressure of 1.2-1.8 atm; the crystal is then annealed in vacuum 3-5·10^-4 mmHg at a temperature of 1,600°C for 3-6 hours.

EFFECT: invention enables growing the improved vanadium cation doped gadolinium-scandium-aluminium garnet crystals ensuring the required pulse Q-switching mode of the passive laser shutters.

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