PRODUCTION PROCESS FOR GROWING CRYSTALS OF GALLIUM SCANDIUM GADOLINIUM GARNETS FOR PASSIVE Q-SWITCHES Russian patent published in 2008 - IPC C30B15/04 C30B29/28 H01S3/11 H01S3/16 

FIELD: chemistry; passive Q-switch crystal growing process.

SUBSTANCE: production process for growing crystals of galium scandium gadolinium garnets is based on Czochralski process, which implies crystal growing from initial molten batch, which is congruently melting gallium scandium gadolinium garnet produced by 3-phase synthesis, doped with magnesium oxide and chromium oxide. These oxides provide for 2.0×10²⁰-2.6×10²⁰ atoms/cm³ concentration of cromium and magensium cations in melt during the first crystal growing, in argon with 14-17% of carbon dioxide, pressure in chamber being 1.3-2.0 atm. For the second, third and subsequent growths, an initial batch amount equal to previous crystal weight, cromium and magnesium content in batch being determined according to formula (С_Cr×С_Mg)/10²⁰ = 0.5÷2, where С_Cr is at least 5×10¹⁹ atoms/cm³, is added to the crucible.

EFFECT: provides for required Q-switched mode, continuous or pulse, within wavelength range of 1,057-1,067 mcm.

2 ex