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2 501 892

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IPC

C30B11/04(2006-01-01)

C30B29/28(2006-01-01)

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Application

2012121717/05, 2012-05-25

(24)

Start date

2012-05-25

(22)

Actual filing date

2012-05-25

(45)

Published

2013-12-20

(72)

Inventor

Sandulenko Aleksandr Vital'EvichPis'Mennyj Viktor AleksandrovichKrutova Larisa Ivanovna

(73)

Holder

Otkrytoe Aktsionernoe Obshchestvo I Tekhnologicheskij Institut Opticheskogo Materialovedenija Vserossijskogo Nauchnogo Tsentra Opticheskij Institut Im. S.I. Vavilova" Vnts Im. S.I. Vavilova")

METHOD OF GROWING YAG DOPED WITH VANADIUM Russian patent published in 2013 - IPC C30B11/04 C30B29/28

Abstract RU 2501892 C9

FIELD: metallurgy.

SUBSTANCE: method of growing YAG doped with vanadium consists in crystal growing by vertically directed crystallisation in molybdenum crucible in reduction atmosphere of argon with hydrogen and using charge that ensures vanadium content on grown crystal varying from 1 to 5 atom percent. Note here that batch composition is defined by general formula Y₃Al_5(1-0.01x)V_0.05xO₁₂, where x is atom percent in octahedral and tetrahedral positions of crystal lattice.

EFFECT: simplified process.

1 dwg, 1 ex

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RU 2 501 892 C9

Authors

Sandulenko Aleksandr Vital'Evich

Pis'Mennyj Viktor Aleksandrovich

Krutova Larisa Ivanovna

Dates

2013-12-20—Published

2012-05-25—Filed