METHOD FOR GROWING ALUMINO-YTTRIUM GARNET DOPED WITH VANADIUM Russian patent published in 2018 - IPC C30B11/04 C30B29/28 H01S3/16 

FIELD: chemistry.

SUBSTANCE: invention relates to a technology for the production of single-crystal materials for laser technology designed to modulate the quality of laser radiation (passive laser shutters - PLS). The method of growing alyumo-ittrium garnet doped with vanadium (AIG:V) is growing a crystal by the method of vertical directional solidification in a molybdenum crucible in a reducing atmosphere of argon with hydrogen, wherein the initial mixture further contains metallic chromium, the composition of the sample is determined from the general formula Y₃(Al_(1-0.01x)V_0.03x/5Cr_0.02x/5)₅O₁₂, where x is the concentration of vanadium in the octahedral and tetrahedral positions of the crystal lattice and is from 1 to 7 at. %. The result of the invention consists in reducing the concentration of the phase inclusions of molybdenum (a crucible material) of less than or equal to 10 mcm in the grown crystal AIG: V with a vanadium concentration greater than or equal to 3⋅10²⁰ cm^-3 up to the values that do not affect the optical quality of the PLS. The PLS based on the crystals AIG: V with a vanadium concentration of ≥3⋅10²⁰ cm^-3 provide Q-switching in the wavelength range of 1.02-1.45 mcm.

EFFECT: improvement of the method, improvement of the properties of the crystals.

2 dwg, 1 tbl