FIELD: technological processes.
SUBSTANCE: cell of multi-element image detector, which is made in the composition of integral circuit, which contains sensitive element with accumulation of charge, which is proportional to intensity of accepted radiation and time of its exposure, elements of accumulated charge memorising, elements of charge transmission under control of coordinate busbars of address sampling to signal busbars, differs by the fact that elements of charge memorising and transmission are made in the form of charge-connected MOS-condensers.
EFFECT: expansion of cell functional resources.
2 dwg
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