FIELD: chemistry.
SUBSTANCE: invention pertains to methods of purifying substances and relates to design of a method of deep purification of ammonia, used in the technology of obtaining epitaxial structures of nitrides of silicon, gallium, aluminium and other materials, used in opto- and microelectronics. The method involves filtration of gaseous ammonia at temperature lower than 0°C and pressure lower than 200 mmHg. The ammonia stream is filtered through a low-temperature zone with linear speed less than 10 cm/s. After filtration, the ammonia is cleaned through vacuum distillation. Purity of the ammonia in relation to content of the basic component is more than 99.99996% of the volume.
EFFECT: simple implementation and high level of industrial safety of the method.
6 ex
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RU2447078C1 |
Authors
Dates
2008-06-27—Published
2007-02-07—Filed