METHOD FOR DEEP PURIFICATION OF MONOSILANE Russian patent published in 2016 - IPC C01B33/04 C01B33/08 C01B33/107 B82B3/00 

FIELD: chemistry.

SUBSTANCE: invention relates to production of silicon-containing materials. Method of producing monosilane is implemented by trichlorosilane disproportionation. Method includes contacting of trichlorosilane and a mixture of chlorosilanes with a catalyst in the fractionation column. Distillation is carried out from a mixture of silicon tetrachloride and separation is done of the obtained chlorosilanes with further return of the mixture into the fractionation column. Extraction of monosilane is performed by partial condensation. Monosilane with impurities of chlorosilanes and the catalyst particles is separated and purified by membrane gas separation. To separate chlorosilanes the separation is carried out at high-permeable for chlorosilane membrane in the counter-flow mode, and to remove heterogeneous catalyst nanoparticles the separation is carried out at high-permeable for monosilane membrane in the mode of direct flow.

EFFECT: technical result is the reduction of material and power consumption with production of more pure monosilane.

1 cl, 1 dwg, 3 ex