FIELD: electricity.
SUBSTANCE: invention is related to electronic microwave equipment, namely to powerful wide band microwave devices of O-type, for instance, to multiple-beam klystrons that mostly operate in medium and short-wave part of centimeter range of waves length. Microwave device of O-type consists of sequentially installed along its axis electron gun, active resonators in the form of wave conductors segment and collector. Active resonators are made as stepwise changing in height, where height is the distance along microwave device axis between end walls of active resonator. In active resonator floating-drift tubes are installed linearly in rows and are fixed in its opposite end walls, and ends of coaxially installed floating-drift tubes are separated by permanent high-frequency gap. Central rows of floating-drift tubes are installed in sections of active resonators with the least height, and subsequent rows of floating-drift tubes that are installed along both sides of central rows, are installed in sections of active resonators with higher heights. It is also suggested to use inlet and outlet active resonator with non-symmetric installation of floating-drift tubes relative to opposite side walls of these resonators. Inlet active resonator may be connected to energy input directly through inlet wave conductor or through inlet passive resonator and inlet wave conductor. Outlet active resonator may be connected with energy output directly through outlet wave conductor or through one or several outlet passive resonators and outlet wave conductor.
EFFECT: increase of efficiency factor at the account of improvement of electric field distribution uniformity in the sphere of electronic flow interaction with microwave field.
12 cl, 5 dwg
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Authors
Dates
2008-06-27—Published
2006-07-31—Filed