O-TYPE SUPERHIGH FREQUENCY DEVICE Russian patent published in 2009 - IPC H01J25/00 

FIELD: physics.

SUBSTANCE: invention concerns the SHF electronic technics, namely to powerful broad-band O-type SHF devices, for example, to single-beam and multi-beam klystrons or klystrodes. The SHF device contains the passive resonator formed by the internal and external conducting cylinders located coaxially and the face walls located coaxially. At least the collector part is located in a cavity of the internal leading cylinder. The hollow ceramic cylinder limiting a vacuum part of the passive resonator is located coaxially between the internal and external conducting cylinders. A half-wave coaxial resonator is chosen as the passive resonator, thus external diametre of hollow ceramic cylinder D is defined from a condition: D₁> D> 0.5 (D₁+D₂), where D₁ - internal diametre of the external conducting cylinder of the passive resonator, D₂ - external diametre of the internal conducting cylinder of the passive resonator.

EFFECT: operation, mainly, in a long-wave part of a centimeter wave band with the increased strip of frequencies, high-power output and reduced cross-section sizes.

2 cl, 6 dwg