FIELD: electrics.
SUBSTANCE: invention is referred to automatic means of semi-conductors planar crystallisation. Essence of the invention consists in that planar crystallisation plant for melt includes vacuum chamber, heating enclosure located inside vacuum chamber, power supply unit, control unit, depth sensors and temperature sensors, heat energy source, boat with semi-conductor charge, electromechanical drive of boat displacement, optical communication, depth and temperature reference input element, two comparators, synch pulse generator, pulse distributor and OR element. Note that depth sensor is based on Redhead gage, temperature sensor is based on radiation multi-channel pyrometer, and electromechanical drive is based on inching motor. Planar crystallisation plant for melt ensures high precision process of semi-conductors crystals growing, for example, sapphire, at minimum time and energy costs.
EFFECT: high precision process of semi-conductors crystals growing at minimum time and energy costs.
1 dwg
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Authors
Dates
2008-08-20—Published
2007-02-19—Filed