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2 339 574

(13)

(51)

IPC

C01B31/36(2006-01-01)

B82B3/00(2006-01-01)

(21) (22)

Application

2007105126/15, 2007-02-12

(24)

Start date

2007-02-12

(22)

Actual filing date

2007-02-12

(45)

Published

2008-11-27

(72)

Inventor

Sevast'Janov Vladimir GeorgievichPavelko Roman GeorgievichSimonenko Elizaveta PetrovnaKuznetsov Nikolaj Timofeevich

(73)

Holder

Institut Obshchej I Neorganicheskoj Khimii Im. N.S. Kurnakova Rossijskoj Akademii Nauk Ran)

METHOD OF OBTAINING HIGHLY- DISPERSIBLE SILICON CARBIDE Russian patent published in 2008 - IPC C01B31/36 B82B3/00

Abstract RU 2339574 C1

FIELD: chemistry.

SUBSTANCE: highly- dispersible silicon carbide is obtained by precipitation from gas phase by thermal destruction of carbosylane at temperature 600-800°C. As carbosylane saturated perclorcarbosylane selected from line Si₄CCl₁₂, Si₆C₂Cl₁₆, Si₈C₃Cl₂₀, C₄Si₁₀Cl₂₄, Si₁₂C₅Cl₂₈ is used. Claimed method allows obtaining silicon carbide with crystallite size not more than 5 nm.

EFFECT: high degree of initial compounds conversion without formation of corrosion and highly explosive compounds.

1 tbl, 2 ex

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RU 2 339 574 C1

Authors

Sevast'Janov Vladimir Georgievich

Pavelko Roman Georgievich

Simonenko Elizaveta Petrovna

Kuznetsov Nikolaj Timofeevich

Dates

2008-11-27—Published

2007-02-12—Filed