FUNCTIONAL ELEMENT OF SEMICONDUCTOR DEVICE Russian patent published in 2020 - IPC H01L21/20 B82B1/00 

Abstract RU 2730402 C1

FIELD: manufacturing technology.

SUBSTANCE: invention can be used to create a functional element of a semiconductor element. Essence of the invention lies in the fact that the functional element of the semiconductor instrument has a base made of a crystalline silicon plate, on which a coating layer is formed in the form of a nanofilm of carbon with a crystal lattice of a diamond type, in a silicon plate under nanofilm there is formed a layer having a nanoporous structure, wherein the said nanofilm is monocrystalline.

EFFECT: obtaining nanocrystalline material with high-quality diamond type crystal structure.

1 cl, 5 dwg

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RU 2 730 402 C1

Authors

Kukushkin Sergej Arsenevich

Osipov Andrej Viktorovich

Svyatets Genadij Viktorovich

Dates

2020-08-21Published

2020-02-03Filed