METHOD FOR FORMING TUNGSTEN CARBIDE FILMS ON A TUNGSTEN-SILICON HETEROSTRUCTURE BY PYROLYSIS OF A POLYAMIDE FILM OBTAINED BY MOLECULAR LAYER DEPOSITION Russian patent published in 2022 - IPC H01L21/205 B82Y30/00 

FIELD: tungsten carbide films production.

SUBSTANCE: invention relates to a technology for producing tungsten carbide films on a silicon substrate. The invention consists in a two-stage process, where at the first stage the process of molecular-layer deposition of the polymer from the gas phase on the heterostructure W-Si_podl. The second stage is followed by heat treatment of the polymer at temperatures of 1200°C in vacuum (or inert atmosphere), which results in the formation of a WC film. As a result of the pyrolytic process, a uniformly distributed layer of graphitized carbon is formed, which interacts with tungsten on the SiC surface at a temperature of 1200°C. Molecular layer deposition makes it possible to control the thicknesses up to 0.1 nm of the conformally deposited polymer film, which makes it possible to control the thickness of the tungsten carbide film as a product of polymer pyrolysis on the W-Si_podl heterostructure.

EFFECT: control of the thickness and uniformity of tungsten carbide films on silicon at the nanometer level through controlled MSO of the initial polymers.

1 cl, 3 dwg