FIELD: physics.
SUBSTANCE: invention relates to the technology of producing semiconductor materials and can be used in making semiconductor devices. The method of producing heteroepitaxial silicon carbide films on a silicon substrate involves obtaining a film on the surface of a substrate by ion-plasma magnetron sputtering of one polycrystalline silicon carbide target while heating the substrate to temperature of 950-1400°C in an Ar atmosphere.
EFFECT: invention simplifies the technology by using one polycrystalline target and improves the quality of films owing to high adhesion.
3 dwg
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