METHOD OF MICROSTRIP SHF INTEGRATED CHIPS MANUFACTURE Russian patent published in 2008 - IPC H05K3/18 

FIELD: electrical engineering.

SUBSTANCE: method of microstrip SHF integrated chips manufacture includes electrolytic application of protective layer from gold onto barrier sublayer of multilayer strips of integrated chips from nickel in phosphate electrolyte of gilding with platinum anodes, which contains the following components in 1l of distilled water: potassium dicyano-1-aurate, K[Au(CN)₂], - 8...12 g/l (in terms of Au); monosubstituted ammonia phosphate, (NH₄)₂HPO₄ 3H₂O, - 8...12 g/l; twice-substituted ammonia phosphate, (NH₄)₂HPO₄, - 40...80 g/l; tallium nitrate, T1 NO₃, -0.005...0.015 g/l, with acidity of pH=5.2...5.6 at current density of D_K=0.3...0.4 A/dm² and temperature of t=68±2°C.

EFFECT: reduction of energy losses in microstrip SHF integrated chips down to 1,1...1,2 dB/m and higher reliability of their operation.