FIELD: chemistry.
SUBSTANCE: steam-gas mixture, discharged from installations of hydrogen reduction of silicon, is condensed and divided into two flows. Flow condensed at temperature minus 95÷105°C is directed to obtain polycrystalline silicon. Flow condensed at temperature minus 10÷12°C is directed to capacity and is bubbled through layer of liquid chlorosilanes. Temperature of liquid phase during bubbling with steam-gas mixture is supported within the range minus 5 ÷ plus 5°C. Device for polysilanechlorides removal contains body 1 with spherical side walls, branch pipe for receiving condensate 6 and branch pipe for steam-gas mixture removal 10. In side wall of body branch pipe 7 of condensate overflow is installed. On the capacity bottom gas-distributing device 4, connected with branch pipe 3 for steam-gas mixture supply, is installed. At the bottom of gas-distributing device 4 holes 5 are made, their pass-through section is equal pass-through section of branch pipe 3 of steam-gas mixture.
EFFECT: continuous removal of polysilane chlorides from steam-gas mixture discharged from installations of hydrogen reduction.
2 cl, 2 dwg
Title | Year | Author | Number |
---|---|---|---|
POLYCRYSTALLINE SILICON PROCESS | 2007 |
|
RU2357923C2 |
METHOD OF OBTAINING POLYCRYSTALLINE SILICON | 2007 |
|
RU2342320C2 |
METHOD OF PRODUCING HIGH-PURITY POLYCRYSTALLINE SILICON | 2018 |
|
RU2739312C2 |
REACTOR OF HYDROGEN RESTORATION OF SILICON | 2007 |
|
RU2341456C1 |
METHOD OF PRODUCING POLYCRYSTALLINE SILICON | 2011 |
|
RU2475451C1 |
METHOD FOR CLEANING OF INTERNAL SURFACES OF SILICON HYDROGEN RESTORATION PLANTS FROM POLYSILANECHLORIDES | 2007 |
|
RU2341454C1 |
METHOD OF PRODUCTION 0F TRICHLOROSILANE | 2004 |
|
RU2280010C1 |
METHOD OF PROCESSING STILLAGE RESIDUE CONTAINING POLYSILANECHLORIDE | 2007 |
|
RU2341455C1 |
METHOD OF OBTAINING POLYCRYSTALLINE SILICON | 2018 |
|
RU2674955C1 |
METHOD OF PRODUCTION OF POLYCRYSTALLINE SILICON | 2004 |
|
RU2278075C2 |
Authors
Dates
2009-01-27—Published
2007-04-19—Filed