FIELD: technological processes; chemistry.
SUBSTANCE: after process of hydrogen restoration of silicon rods with polycrystalline silicon deposited on them are cooled down to the temperature of +600÷230°C. As dissolvent, silicon tetrachloride is supplied in mixture with hydrogen at mole ratio of 1: (0.5÷1.0). Temperature of reactor walls is maintained within the limits of +35÷40°C through the whole process. Safe unloading of polycrystalline silicon is carried out after performance of technological process of restoration with elimination of any residual traces of polysilanechlorides in detachable parts of reactor and units of hydrogen restoration plant.
EFFECT: polycrystalline silicon of high quality and reduction of time for plant units intercycle processing and preparation for the following process.
1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| POLYCRYSTALLINE SILICON PROCESS | 2007 |
|
RU2357923C2 |
| METHOD OF PROCESSING STILLAGE RESIDUE CONTAINING POLYSILANECHLORIDE | 2007 |
|
RU2341455C1 |
| METHOD OF REMOVAL OF POLYSILANE CHLORIDES FROM STEAM-GAS MIXTURE DISCHARGED FROM INSTALLATIONS OF HYDROGEN REDUCTION OF SILICON AND DEVICE FOR ITS REALISATION | 2007 |
|
RU2344993C1 |
| REACTOR OF HYDROGEN RESTORATION OF SILICON | 2007 |
|
RU2341456C1 |
| METHOD OF PRODUCING HIGH-PURITY POLYCRYSTALLINE SILICON | 2018 |
|
RU2739312C2 |
| METHOD OF OBTAINING POLYCRYSTALLINE SILICON | 2007 |
|
RU2342320C2 |
| METHOD OF PRODUCING POLYCRYSTALLINE SILICON | 2011 |
|
RU2475451C1 |
| METHOD OF OBTAINING POLYCRYSTALLINE SILICON | 2018 |
|
RU2674955C1 |
| METHOD OF PRODUCTION OF TRICHLOROSILANE BY PLASMA CHEMICAL HYDROGENATION OF SILICON TETRACHLORIDE AND DEVICE TO THIS END | 2007 |
|
RU2350558C2 |
| POLYCRYSTALLINE SILICON PRODUCTION PROCESS | 1998 |
|
RU2136590C1 |
