POTATOES GROWING TECHNIQUE Russian patent published in 2009 - IPC A01B79/02 

FIELD: agriculture.

SUBSTANCE: proposed potatoes growing technique primarily envisages soil tillage and levelling. After that black mould humus is applied onto the ground surface in strips at a 45 cm spacing. Then the black mould humus strips are buried under layers of bulk soil to form 18-20 cm high ridges. The potato bulbs are planted into the ridges at a depth of 6-8 cm and at a 45 cm spacing. The planting over, the spacings are filled with fresh-cut grass mass (sequentially compacted) to the ridge height level. Then the ridge and spacing surfaces are mulched with fresh-cut grass mass, the layer thickness being 8-10 cm. On emergence of seedlings the surface is additionally mulched with fresh-cut grass mass, the layer thickness being 8-10 cm.

EFFECT: proposed technique enables reduction of the potatoes growing process labour intensity and provides for maintenance of water and air regime conditions optimum for development of potato plants growing on heavy soils.

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