AQUOSYSTEM TANTALUM ELECTROLYTE DEPOSITION (VERSIONS) Russian patent published in 2009 - IPC C25D3/54 

FIELD: chemistry.

SUBSTANCE: method involves cathodic deposition thus making tantalum plating at DC current density 50 A/dm² at simultaneous pulse current effect of amplitude 0.05 to 5 A, frequency 10 Hz to 10 kHz, pulse duration 10^-5 to 10^-2 s from aquosystem of metal tantalum content 10-50 g/l and ammonium hydrofluoride 100-300 g/l at temperature +18° to +40°C. The second method involves cathodic deposition thus making tantalum plating at DC current density 50 A/dm² at simultaneous pulse current effect of amplitude 0.05 to 5 And, frequency 10 Hz to 10 kHz, pulse duration 10^-5 to 10^-2 s from the aquosystem prepared by dissolving metal tantalum in aqueous solution, containing ammonium hydrofluoride 100-300 g/l, in activating alternating current of frequency 50 Hz until tantalum concentration in electrolyte is 10-50 g/l.

EFFECT: producing high-quality tantalum plating from aquosystem.

2 cl, 1 ex