SINGLE CRYSTAL OF SULPHATE HYDRATE OF CESIUM-NICKEL, METHOD OF ITS GROWING AND APPLICATION IN THE CAPACITY OF ULTRAVIOLET LIGHTING FILTER Russian patent published in 2009 - IPC C30B7/08 C30B29/10 

FIELD: metallurgy, crystals.

SUBSTANCE: invention relates to crystallography field and can be used for growing of single crystals of sulphatechloride cesium-nickel Cs₂Ni(SO₄)₂·6H₂O, which are provided for application in the capacity of ultraviolet lighting filters in alarm monitor of high-temperature flame sources. Single crystal is grown from mother growth solution by cooling method. Preliminary mother growth solution and casting mold with beforehand placed inside it seed crystal is overheated for 8-9°C higher the solution saturation temperature. Then solution is saturated into casting mold, solution temperature is reduced up to the temperature lower saturation temperature for 0.1-0.5°C, it is started solution saturation, it is thermostated solution at defined temperature during 20-28 hours, after it is implemented phased reduction of the solution temperature, at the first stage solution temperature is reduced for 0.5-2°C, and at the second stage temperature reduction is implemented at a rate from 0.6°C up to 4°C per day, upon completion of the second stage solution is poured out, temperature is reduced inside the casting mould up to room temperature and then single crystal is extracted from the casting mould. Single crystal keep thermal stability unlimited time up to the temperature 130°C, that increases devices maintainability, in which it is used, and pass ultraviolet light in the range of waves from 220 up to 320 nm. There are given parameters of crystal grating (Ǻ): a=6.3576(8), b=12.7660(17), c=9.2550(10), β=106.97(01)°, V=718.4 Ǻ³, Z=2, d_deduct=2.887 g·cm^-3.

EFFECT: conservation of thermostability and providing of ultraviolet light passing in the range of waves from 220 up to 320 nm of crystal, that increases devices maintainability, in which it is used.

9 cl, 3 dwg