INJECTION LASER, METHOD OF ITS REALIZATION AND DEVICE FOR GAS-CYCLE EPITAXY Russian patent published in 2009 - IPC H01S5/32 H01L21/02 

FIELD: physics, optics.

SUBSTANCE: invention is related to design of semiconductor injection lasers and technology of their manufacture, and may be used for creation of laser matrices of multi-channel fibre optic interfaces. Injection laser comprises contact layers and layers of semiconductor materials that form active radiating structure, which are installed coaxially in channel of circular, n-angular or figure section arranged in substrate body, at that external contact layer is connected to channel walls directly or via buffer layers, layers of semiconductor materials are installed on it, which create active radiating structure, and central contact layer is applied on them, at that on end surface of semiconductor materials layers that create active radiating structure, there is nontransparent mirror layer installed from one side, and semi-transparent mirror layer is arranged on the other side; also central contact layer and external contact layer are connected to conducting paths, which are arranged on substrate. Method for manufacture of injection laser includes serial application by method of chemical deposition from gas phase to substrate of layer of materials that create structure of injection laser, at that through channels are arranged in substrate body, and then gas phase of metal organic compounds is serially passed through them, and thus materials layers are deposited on internal surface of channels; also external contact layer is formed, as well as layers of semiconductor materials that create active radiating structure, and central contact layer, then conducting paths are applied on substrate, as well as mirror layers. Device for gas-cycle epitaxy comprises reactor, holder of substrates, inlet and outlet nozzles, heaters, loading and inspection manholes, at that reactor is separated into high pressure and low pressure zones by holder of substrates with substrates installed in them with through channels, and has control system that provides for maintenance of specified pressure values in zones of high and low pressure, and also difference of gas pressures in them, which is connected to pressure sensors installed in each reactor zone, and with reduction units, and holder of substrates represents plate with seats for substrates and with through holes in those areas, where through channels are available in substrates, at that size of holes in holder is more than size of area with channels in substrate.

EFFECT: possibility of large-scale production of laser strips and matrices without manual assembly.

5 cl, 9 dwg