THIN-FILM SEMICONDUCTOR INJECTION LASER BASED ON MULTIPLE PASS SEMICONDUCTOR HETEROSTRUCTURE (VERSIONS) Russian patent published in 2009 - IPC H01S5/00 

FIELD: physics, optics.

SUBSTANCE: present invention pertains to semiconductor devices, and more specifically, to lasers based on multiple pass p-n heterostructures. The laser based on p-n multiple pass heterostructures, consists of a doped active area in the form of a semi-conductive layer with a thickness of not less than two Debye lengths, located between wide-band gap layers of n- and p- conduction types. Thickness of the laser heterostructures is not less than 8-10 Debye lengths and does not exceed 20÷40 microns and it is welded or glued on one of its contact surfaces to the lamel-carrier and electrically joined with it.

EFFECT: reduction of the value of the operating current and threshold current density, and also an increase in the external quantum efficiency and improvement in other laser characteristics.

5 cl, 2 dwg