METHOD OF GROWING NONPOLAR EPITAXIAL HETEROSTRUCTURES BASED ON GROUP III ELEMENT NITRIDES Russian patent published in 2008 - IPC C30B25/18 C30B29/38 H01L33/00 

FIELD: crystal growing and semiconductor materials.

SUBSTANCE: invention relates to technology of manufacturing semiconductor materials and devices via gas epitaxy technique from organometallic compounds, in particular to manufacturing heterostructures based on group III element nitrides and devices utilizing the same, such as white light diodes, lasers, etc. Method of growing nonpolar epitaxial heterostructures for white light-emitting diodes based on compounds and solid solutions of group III element nitrides comprises gas-phase precipitation of one or more layers of heterostructures represented by formula Al_xCa_1-xN, where 0<x≤1, on substrate, which is a-langacite a-La₃Ga₅SiO₁₄, with disagreement of c-parameters of lattice "substrate-epitaxial layer Al_xCa_1-xN" not exceeding the value within a range from -2.3% at x=1 to +1.7% at x=0 and disagreement of thermal expansion coefficient in direction of c-axis not exceeding the value within a range from +49% at x=1 to -11% at x=0.

EFFECT: enabled preparation of heterostructures with low density of defects and mechanical tensions.

6 cl, 4 dwg, 1 tbl