SEMICONDUCTOR INJECTION LASER Russian patent published in 2007 - IPC H01S5/30 

FIELD: semiconductor devices; lasers built around multipass p-n heterostructures.

SUBSTANCE: proposed laser has doped active region in the form of semiconductor layer whose thickness ranges between 0.1 μm and several diffusion lengths of minor media. Active region is disposed between two wide-band n and p ohmic-contact layers. Additional semiconductor layer, 20 to 500 angstrom thick (quantum well), is grown between wide-band layers, its thickness being smaller by 0.1 kT to 300 MeV than that of active region and thickness of the latter equals minimum two Debye lengths.

EFFECT: improved design.

3 cl, 2 dwg