METHOD FOR PREPARATION OF NANOCRYSTALLINE SILICON POWDERS Russian patent published in 2009 - IPC C01B33/02 

Abstract RU 2359906 C2

FIELD: chemistry.

SUBSTANCE: invention can be used in chemical, perfumery and textile industries. The initial silicon powder is fed with constant rate to the flow of plasma-supporting gas. The process of silicon evaporation with atomic vapour forming is carried out at the temperature of microwave plasma 4000 - 6000°C. The condensation of silicon atomic vapour is implemented in the flow of gas coolant fed to reactor perpendicularly to the mix flow of the atomic silicon and carrier gas. The resulting nanocrystalline silicon particles fell at first to the solid reflecting surface mounted in the reactor perpendicularly to the gas coolant flow and then to the receiver of ready nanocrystalline silicon powder.

EFFECT: claimed invention allows to obtain with yield more than 50% the crystalline nanodispersed silicon powders with particle size 2,0 - 30 nm and the crystalline nanodispersed powders with nanoparticles having the crystal nucleus and oxidised surface with the thickness of oxide film not exceeding several layers.

8 cl, 2 ex

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RU 2 359 906 C2

Authors

Belogorokhov Aleksandr Ivanovich

Parkhomenko Jurij Nikolaevich

Trusov Lev Il'Ich

Dates

2009-06-27Published

2007-08-31Filed