FIELD: chemistry.
SUBSTANCE: invention relates to production of pure nanostructured silicon and can be used in different semiconductor engineering fields. Nanostructured silicon structures are obtained by thermal decomposition of monosilane, which is carried out by adiabatic compression of a mixture of 10 vol % monosilane in argon with initial pressure of 0.095 MPa and temperature of 130°C.
EFFECT: invention enables to obtain solar-grade silicon nanostructures with size of 30-100 nm in amorphous and crystalline form.
5 dwg, 5 ex
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