FIELD: physics; acoustic.
SUBSTANCE: invention relates to electronics, and more specifically to acoustoelectronics, and can be used in generators, filters, delay lines and other devices which use surface acoustic waves. Device has an active element in contact with a solid-state substrate which has semiconductor properties or is made from copper with an oxide surface layer, and a laser as an external source of energy. The active element is an opal matrix. The laser radiation has power of at least 0.05 GW/cm2. The laser radiation is in the range of the photon band gap of the opal matrix. The device can include a system for cooling the active element to temperature below 200 K. The solid-state substrate can be silicon.
EFFECT: wider range of generating surface acoustic waves to at least 22,5 GHz with considerable increase in energy conversion efficiency.
1 tbl, 3 cl, 4 dwg
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Authors
Dates
2009-10-27—Published
2008-06-07—Filed