METHOD OF FORMING DOMAIN STRUCTURE IN SINGLE-CRYSTAL WAFER OF NON-LINEAR OPTICAL FERROELECTRIC MATERIAL Russian patent published in 2009 - IPC G02F1/355 

FIELD: physics.

SUBSTANCE: method involves effect of high voltage, which is applied across metal electrodes placed on opposite polar faces of the wafer. One of the electrodes is in form of a structure consisting of a strip with defined configuration (strip electrode). The surface of the wafer with the strip electrode is exposed to at least one pulse of laser radiation. High voltage is applied across the electrodes simultaneously or after the pulse of laser radiation. Parametres of the pulse of laser radiation are chosen such that, they to not result in evaporation of the strip electrode. The surface of the wafer with the strip electrode can be repeatedly exposed to pulses of laser radiation. The value of high voltage applied across the electrodes simultaneously with exposure to the pulse of laser radiation does not exceed the coercive value.

EFFECT: invention allows for formation of through-domain structures in a single-crystal wafer of non-linear optical ferroelectric material, exactly matching the figure of the strip electrode.

8 cl, 5 dwg