METHOD OF FORMING DOMAIN STRUCTURE IN SINGLE-CRYSTAL WAFER OF NONLINEAR OPTICAL FERROELECTRIC MATERIAL Russian patent published in 2011 - IPC G02F1/35 

FIELD: physics.

SUBSTANCE: method of forming a domain structure in a single-crystal wafer of nonlinear optical ferroelectric material involves application of high voltage between metal electrodes lying on opposite polar faces of the wafer. One of the electrodes is in form of a structure consisting of strips of defined configuration (strip electrode). At least one electric current pulse is passed through the strip electrode. High voltage is applied between the electrodes simultaneously or after the electric current pulse. Such parametres of the electric current pulse which do not result in destruction of the strip electrode are selected. Electric current pulses can be passed through the surface of the water with the strip electrode several times.

EFFECT: formation of through domain structures in a single-wafer of nonlinear optical ferroelectric material exactly matching the drawing of the strip electrode.

7 cl, 3 dwg