METHOD OF FORMING DOMAIN STRUCTURE IN MONOCRYSTALLINE WAFER OF NONLINEAR-OPTIC FERROELECTRIC MATERIAL Russian patent published in 2012 - IPC G02F1/00 

FIELD: physics.

SUBSTANCE: method can be used to form a domain structure in accordance with a given figure, e.g. periodic stripe domain structure, in a monocrystalline wafer of a nonlinear-optic ferromagnetic material, e.g. lithium niobate or lithium tantalate, as well as MgO doped lithium niobate or lithium tantalate. The method involves application of high voltage between electrodes lying on opposite polar faces of the wafer. One of the electrodes is in form of a structure consisting of strips of defined configuration (strip electrode). Before depositing an electrode on the face of the wafer, opposite the face with the deposited strip electrode, an additional dielectric layer is deposited, parameters of which are selected so as to limit lateral growth of domains and reduce the effect of conductivity arising during formation of the domain structure.

EFFECT: invention enables formation of end-to-end domain structures in a monocrystalline wafer of nonlinear-optic ferroelectric material exactly matching the figure of the strip electrode.

8 cl, 3 dwg