METHOD OF FORMING POLYDOMAIN FERROELECTRIC MONOCRYSTALS WITH CHARGED DOMAIN WALL Russian patent published in 2013 - IPC C30B33/04 C30B29/30 H01L41/22 

FIELD: chemistry.

SUBSTANCE: method of forming polydomain ferroelectric monocrystals with a charged domain wall involves using a workpiece in form of plate of ferroelectric monoaxial monocrystal of the lithium niobate and lithium tantalate family, which is cut perpendicular to the polar axis, one of the surfaces of which is irradiated with ion flux to form high concentration of point radiation defects in the surface layer, which results in high electroconductivity of the layer, after which an electric field is formed in the plate, directed along the polar axis, the polarity and value of which enable formation of domains on the surface of the plate which is not exposed, and their growth deep into the plate in the polar direction up to the boundary of the layer with high conductivity, which leads formation of a charged domain wall with an irregular shape, wherein the depth of the layer is determined by the value of the energy and dose of ions, and the shape of the wall is determined by the value of the electric field formed.

EFFECT: invention enables to form a charged domain wall, having an irregular three-dimensional shape with given geometric parameters, lying at a given depth in a monocrystalline ferroelectric plate without heating the plate or cutting a workpiece for making the plate.

4 cl, 7 dwg