METHOD OF MAKING THIN-FILM RESISTOR Russian patent published in 2009 - IPC H01C17/22 

FIELD: physics.

SUBSTANCE: method of a making thin-film resistor involves depositing a resistive layer onto a substrate, formation of terminal pads, formation of resistive elements through photolithography, determination of the value of resistance of thin-film resistive elements, adjusting to the required value of resistance and temperature coefficient of resistance (TCR) of the resistor based on calculated ratios between resistance of thin-film structures, their TCR and TCR of the integrated resistor, which is made in form of a series electrical circuit of sections of this resistor, consisting of first and second rectangular resistive elements with different TCR, on the edges of which there are two current terminal pads, and a third resistive element is made from the main resistive material and joined to the body of the integrated resistor at the joint of the first and second resistive elements and a third potential terminal pad, where all resistive elements are formed at the same time after etching the resistive coating, during which projections of different lengths are also formed in the body of the integrated resistor, adjacent to current terminal pads and allowing for reduction of the peak value of power released in the contact area. TCR of the series-connected sections of the integrated resistor is adjusted to values with different signs through thermal treatment, and TCR of the integrated resistor is reduced to zero through laser adjustment, using the analytical relationship R1/R2=(α2-α)/(α-α1), where R1, R2 - resistance of the first and second thin-film elements, respectively, α1, α2 - TCR of the first and second resistive thin-film elements, respectively, and TCR of the integrated resistor, with alternating measurement of resistance of series-connected sections of the integrated resistor.

EFFECT: design of a precision thin-film resistor using a simple method.

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