METHOD OF MANUFACTURE OF HIGH-TEMPERATURE THIN-FILM RESISTOR Russian patent published in 2008 - IPC H01C17/00 G01L7/08 

FIELD: physics, measurement.

SUBSTANCE: invention relates to the electronic equipment, in particular, to the transducer manufacture technology, and may be used for the development of compact metal-film transducers of mechanical quantities capable of operating in a wide range of operating temperatures (-196-+150)°C. The purpose is attained by the following: in the proposed method of manufacture of a high-temperature thin-film resistor of a nickel- and chromium-based material, involving formation of resistive monolayers with a negative and positive TCR in vacuum, layer-by-layer formation of resistive monolayers is carried out in a single process cycle, a resistive layer with a negative TCR is formed by electron-beam evaporation, and a resistive layer with a positive TCR is formed by thermal evaporation; the resistance of a two-layer thin-film resistor is determined by a mathematical expression.

EFFECT: decrease in labour consumption, increase in thin-film resistor production volume.

1 dwg, 1 tbl