METHOD FOR PRODUCING A MULTILAYER THIN-FILM HETEROSTRUCTURE WITH A GIVEN VALUE OF SPECIFIC SURFACE RESISTANCE Russian patent published in 2021 - IPC H01C17/06 

FIELD: electronic technology.

SUBSTANCE: invention relates to the field of electronic technology, namely, to measuring instruments in which thin-film strain gages on a metal substrate are used. A method for manufacturing a thin-film nano - and micro-dimensional system of a physical quantity sensor with a given positive temperature coefficient of resistance (TCR) of resistive elements is proposed. A heterogeneous structure of nano- and micro-dimensional films of materials is formed on the planar side of a solid-state substrate by vacuum spraying methods containing thin-film dielectric, resistive and contact layers. After that, using photolithography and etching, resistive elements (strain gages, thermistors), contact conductors and contact pads to them are formed. The resistive layer is formed by magnetron spraying in a vacuum chamber simultaneously from two separate sources. The formation of resistive layers by magnetron spraying in a vacuum chamber is carried out using one of the elements of the metal group: iron (Fe), nickel (Ni), cobalt (Co) from one target and one of the metal ligands: vanadium (V), chromium (Cr), titanium (Ti) from the other target. By changing the ratio of components in the heterostructure by a percentage from 10% to 90%, the required value of the specific surface resistance of the resistive film is formed. The end of the process of the multilayer heterostructure deposition is controlled by the resistance of the witness located at the substrate carousel. The number of cycles of joint deposition of heterostructure layers is determined by a mathematical expression.

EFFECT: technical result is an increase in the temperature stability of the initial output signal of the sensor strain circuit in a wide temperature range from cryogenic temperatures to a temperature of +250°C.

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