FIELD: electricity.
SUBSTANCE: invention relates to a method of making a thin-film resistor, in which before deposition of a resistive layer and formation of contact pads, an additional layer (film) of a semiconductor material based on oxides of transition metals is first applied on a dielectric substrate, where the value of specific surface resistance of the additional layer is determined based on the criterion of minimizing the TCR of the two-layer structure on one side and providing effective protection against local thermal inhomogeneities on the other side.
EFFECT: improves operational characteristics of thin-film resistors by load capacity, temperature stability, TCR, reliability.
3 cl, 3 tbl
| Title | Year | Author | Number |
|---|---|---|---|
| METHOD OF MAKING THIN-FILM RESISTOR | 2008 |
|
RU2374710C1 |
| PRECISE THIN-FILM RESISTOR | 2010 |
|
RU2421837C1 |
| COMBINED THIN-FILM RESISTIVE STRUCTURE WITH TEMPERATURE SELF-COMPENSATION | 2022 |
|
RU2808452C1 |
| METHOD OF MAKING THIN-FILM PRECISION RESISTOR | 2022 |
|
RU2818204C1 |
| METHOD FOR PRODUCING A MULTILAYER THIN-FILM HETEROSTRUCTURE WITH A GIVEN VALUE OF SPECIFIC SURFACE RESISTANCE | 2020 |
|
RU2750503C1 |
| METHOD FOR MANUFACTURING THIN-FILM RESISTOR | 2000 |
|
RU2208256C2 |
| THIN-FILM RESISTOR | 0 |
|
SU1064322A1 |
| POWERFUL HF- AND MF-TRANSISTOR STRUCTURE | 2020 |
|
RU2743674C1 |
| TEMPERATURE-VOLTAGE CONVERTER | 2008 |
|
RU2374709C1 |
| METHOD OF MANUFACTURE OF HIGH-TEMPERATURE THIN-FILM RESISTOR | 2007 |
|
RU2326460C1 |
