METHOD FOR MANUFACTURING THIN-FILM RESISTOR Russian patent published in 2003 - IPC

FIELD: electronic engineering; thin-film microelectronics. SUBSTANCE: method includes evaporation of resistive layers of thin-film structures onto insulating substrate, formation of contact pads abutting against one of insulating substrate sides, photolithographic formation of resistor units from heterogeneous thin-film materials available in limited range of those possessing desired electrophysical properties and geometry of crystals, measurement of thin-film resistor unit value, adjustment of resistance and temperature coefficient of resistance (TCR) of integrated-circuit resistor to desired values basing on calculated correlations between resistances of heterogeneous thin-film structures, their TCR, and integrated-circuit resistor TCR. Thin-film resistive structure is made of at least two materials having different resistances and TCRs and of at least three resistor units; two resistor units are first interconnected in series or in parallel depending on desired value of integrated-circuit resistor and its TCR and also on power characteristics of thin-film materials, correlations between resistances and TCRs of different thin- film resistor units being found from mathematical expressions; then third resistor having adjusting sections, R₃ and TCR-α₃ parameters is connected in parallel or in series, integrated-circuit resistance and TCR-α_o are measured; adjustments are made using equations R₀₁/R₃ = (α₃-α_o)/(α_o-α₀₁) and R₀₁/R₃ = (α₀₁-α_o)/(α₀₁/α₃) for series and parallel connections of third resistor to aggregate resistor, respectively. EFFECT: enhanced precision of integrated-circuit resistance and temperature coefficient of resistance. 1 cl, 9 dwg