DIODE-TRANSISTOR BRIDGE Russian patent published in 2010 - IPC H02M3/156 

FIELD: electrical engineering.

SUBSTANCE: proposed diode-transistor bridge relates to electrical engineering, particularly to electrical machines and can be used in structural couplings with magnetic bearings. Diode-transistor bridge comprises supply diagonal and load diagonal incorporating at least one inductor coil (8). Note that throttle (7) is additionally included in load diagonal, RC-circuit (9) being connected in parallel to said throttle. Capacitor (12) and power source are connected in said supply diagonal, the latter being connected via separating diode (13). Transistors (5,6) connected into bridge arms have no common connection point. Storage capacitor (12), throttle (7) with RC-circuit (9) and separating diode (13) connected in the diode-transistor bridge in proposed manner, allows a notable reduction in consumed power of the bridge, diametre of conductors connected to power supply and its overall dimensions.

EFFECT: higher reliability, reduced dependence of source weight-and-size upon consumed power.

1 dwg