RADIATION-RESISTANT VOLTAGE-TO-CURRENT CONVERTER Russian patent published in 2010 - IPC H03F3/45 

FIELD: physics; radio.

SUBSTANCE: invention relates to radio engineering and communication and can be used as a device for converting analogue signals in the structure of analogue microcircuits for different functional purposes (for example operational amplifiers, voltage multipliers, comparators etc). The radiation-resistant voltage-to-current converter has a signal source (1) connected between bases of a first (1) and a second (2) input transistor, first (4) and second (5) current stabilising two-terminal circuits connected to emitters of corresponding first (2) and second (3) input transistors, a scaling resistor (6) connected between emitters of the first (2) and second (3) input transistors, a load circuit (7) connected to collectors of the first (2) and second (3) input transistors and first (8) and second (9) current outputs of the device. The circuit includes first (10), second (11), third (12) and fourth (13) additional transistors. The base of the first (10) additional transistor is connected to the base of the first (2) input transistor. The emitter of the first (10) additional transistor is connected to the emitter of the first (2) input transistor. The base of the second (11) additional transistor is connected to the first (8) current output of the device. The emitter of the second (11) additional transistor is connected to the collector of the first (10) additional transistor. The collector of the second (11) additional transistor is connected to the power supply (14). The base of the third (12) additional transistor is connected to the base of the second (3) input transistor. The emitter of the third (12) additional transistor is connected to the emitter of the second (3) input transistor. The base of the fourth (13) additional transistor is connected to the second (9) current output of the device. The emitter of the fourth (13) additional transistor is connected to the collector of the third (12) additional transistor. The collector of the fourth (13) additional transistor is connected to the power supply (14).

EFFECT: reduced conversion errors under radiation conditions.

2 cl, 9 dwg