METHOD TO DETERMINE ELECTRON FLOW DENSITY DISTRIBUTION OVER FLOW SECTION Russian patent published in 2010 - IPC G01T1/29 B82B1/00 

FIELD: physics.

SUBSTANCE: proposed method comprises arranging long-persistence phosphor-target on flow path, irradiating said target by electron flow, producing on target surface of luminescent image of electron flow section and determining electron flow distribution over said section. Note here that said long-persistence phosphor-target represents nano-structure Be₂(Si_0,8Ge_0,2)O₄-based ceramics, while said distribution is determined quantitatively from said luminescent image of electron flow section converted from analog form into digital form.

EFFECT: expanded performances, development and control of accelerating hardware and high-precision electronics.

5 cl, 4 dwg