CRUCIBLE FOR SILICON CRYSTALLISATION Russian patent published in 2010 - IPC C30B15/10 C30B11/00 C30B29/06 C03C17/34 

FIELD: machine building.

SUBSTANCE: crucible for silicon crystallisation consists of main case 2 having bottom surface 21 and side walls 22 creating internal volume, of substrate 25 containing from 80 to 100 wt % of silicon nitride and positioned near surface of side walls facing internal volume, of intermediate layer 3 containing from 50 to 100 wt % of silicon dioxide applied from top of substrate 25 and of surface layer 4 containing from 50 to 100 wt % of silicon nitride, to 50 wt % of silicon dioxide and to 20 wt % of silicon applied from top of intermediate layer 3. The crucible can include additional intermediate layer 31 on top of first intermediate layer 3 containing to 50 wt % of silicon nitride with residue containing silicon dioxide.

EFFECT: design of crucible eleiminating preparation of very thick coating on equipment of final user, also facilitation of easy and fast application of coating with improved anti-adhesion properties for production of silicon ingots without cracks.

11 cl, 2 dwg