FIELD: metallurgy.
SUBSTANCE: crucible 1 for crystallisation of silicon consists of base 2 with lower surface 21 and side walls 22, forming internal volume, and of protecting coating 3 containing from 80 to 95 wt % of silicon nitride and from 5 to 20 % of low temperature mineral binding material at complete contents of oxygen within range from 5 to 15 % in weight.
EFFECT: protective coating can be applied fast and efficiently, is more durable and possesses improved cohesion with crucible walls.
13 cl, 2 tbl, 1 dwg
| Title | Year | Author | Number |
|---|---|---|---|
| CRUCIBLE FOR SILICON CRYSTALLISATION | 2006 |
|
RU2394944C2 |
| METHOD FOR OBTAINING NON-ADHESIVE COATING ON BASIS OF SILICON CARBIDE | 2009 |
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RU2479679C2 |
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|
RU2462434C2 |
| POLYCRYSTALLINE ABRASIVE MATERIALS AND METHOD OF THEIR FABRICATION | 2005 |
|
RU2404021C2 |
| COATED ABRASIVE MATERIALS AND PRODUCTION METHOD THEREOF | 2005 |
|
RU2409605C2 |
| CRYSTALLISATION PAN FOR SILICON CRYSTALLISATION | 2005 |
|
RU2355832C2 |
| NANO-STRUCTURAL COATING SYSTEM, COMPONENTS AND CORRESPONDING METHODS OF MANUFACTURING | 2004 |
|
RU2352686C2 |
| ROLLER CONTAINING ABRADABLE COATING | 2015 |
|
RU2696037C2 |
| SINTERED SILICON CARBIDE-BASED REFRACTORY MATERIAL WITH SILICON NITRIDE AS BINDER | 2009 |
|
RU2496745C2 |
| METHOD FOR TREATMENT OF RARE-EARTH METAL CHLORIDE, BROMIDE OR IODODE IN CARBONACEOUS CRUCIBLE | 2003 |
|
RU2324021C2 |
