METHOD OF PRODUCING MONOCRYSTALLINE SiC Russian patent published in 2017 - IPC C30B23/00 C30B23/06 C30B29/36 C23C14/26 

FIELD: chemistry.

SUBSTANCE: method includes sublimation of a SiC source placed in a crucible onto a seed SiC single-crystal plate placed on a flat ring support, and one or more layers are applied to the seed SiC single-crystal plate from the side not intended for growth of the SiC single-crystal ingot, providing the thermochemical stability and given temperature conditions on the surfaces of the plate of the seed SiC single-crystal, and the holder with a seed SiC single-crystal plate is installed in a crucible in such a way, that the surface of the plate, intended for the growth of the SiC single-crystal ingot, is turned into the inside of the crucible and contacts with the gaseous medium inside the crucible during sublimation. On the circumference of the inner cylindrical surface of the holder flat ring, protrusions with a width of h=(1-3)⋅t and a length of S=(1-10)⋅h are periodically made, the ends of which are provided with ledges with a depth of k=0.3-1 mm and a width of t=0.5-2.0 mm, for placing a seed SiC single-crystal plate with a thickness H exceeding the depth of the ledge k, and on top of the holder with a plate with the deposited layers a plate of thermally expanded graphite with a thickness exceeding the value (H-k) is placed, and then is fixed with a clamping element in the form of a rigid plate of 1.5-8 mm thick and a retaining ring of thermostable materials.

EFFECT: improving the quality of the ingot, reducing the elastic stresses in the seed single-crystal plate, achieving a uniform growth rate over the entire surface of the seed single-crystal plate with the formation of an almost flat crystallization front.

6 dwg, 1 tbl