METHOD FOR PRODUCING SINGLE-CRYSTAL SIC POLYTYPE 4H Russian patent published in 2022 - IPC C30B23/00 C30B29/36 C30B35/00 

FIELD: single-crystal silicon carbide production.

SUBSTANCE: invention relates to a technology for single-crystal silicon carbide single-crystal silicon carbide SiC, a wide-gap semiconductor material used in power electronics and for creating integrated circuits based on it. The method for producing single-crystal SiC polytype 4H consists in placing a growth crucible, consisting of the upper 1 and lower 2 parts, with a source of silicon carbide 5 placed inside it, a plate of a seed single crystal SiC 4 with a shaper 6 in the space of the growth chamber, heating the growth crucible in an inert gas atmosphere up to temperatures, sufficient for the sublimation of the source of silicon carbide 5 in the presence of axial temperature gradients and the transfer of volatile silicon-containing compounds from the source of silicon carbide 5 to the plate of the seed single crystal 4, and the growth of a single-crystal SiC ingot in the presence of a cerium compound, which is a solid solution of tantalum and cerium carbides containing cerium from 0.5 to 1.5 wt.%, which is applied in the form of a film on the inner surfaces of the growth crucible 1, 2 or the inner surfaces of the former 6.

EFFECT: obtaining single-crystal SiC ingots without parasitic polytype inclusions.

1 cl, 3 dwg, 1 tbl, 5 ex