FIELD: physics.
SUBSTANCE: method involves providing an image of the semiconductor layer of a semiconductor light-emitting device, conversion of this image to a binary image, obtaining a Reni dimension Dq for degree q as a multifractal analysis parametre of the binary image, and determination of the Reni dimension Dq as a quantum efficiency criterion for the semiconductor light-emitting device.
EFFECT: possibility of analysing quantum efficiency of a semiconductor device through objective quantitative evaluation of the crystalline state of the semiconductor layer of the said device.
3 cl, 5 dwg
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