FIELD: electrovacuum electronic engineering; semiconductor photoemissive devices operating in visible and close-to-ultraviolet region.
SUBSTANCE: proposed device that can be used to develop new class of effective photoemissive instruments around wide-range semiconductors has semiconductor material layer based on nitrides of third-group elements of electron conductivity with concentration of minimum 5·1016 cm-3, forbidden gap width Eg, electron affinity χ, and electron work function ϕ on working surface of mentioned semiconductor material turned into vacuum and activated by alkali metal or its oxide meeting relationship Eg > χ, eV; χ > ϕ, eV.
EFFECT: enlarged spectral range and enhanced reproducing ability of spectral characteristics.
19 cl, 9 dwg
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Authors
Dates
2005-04-10—Published
2003-04-29—Filed