FIELD: electricity.
SUBSTANCE: method of producing a nitride semiconductor emitting ultraviolet radiation element, having a peak emission wavelength of 285 nm or shorter, comprises a first step, on which n-type semiconductor layer is formed, consisting of n-type semiconductor based on AlXGa1-XN (1 ≥ X ≥ 0.5), on upper surface of underlying part, including sapphire substrate, the second stage, on which an active layer is formed above the layer of the n-type semiconductor, which includes a light-emitting layer consisting of an AlYGa1-YN (X > Y > 0) based semiconductor, and which generally consists of an AlGaN-based semiconductor, and a third step of forming a p-type semiconductor layer consisting of AlZGa1-ZN (1 ≥ Z > Y) p-type semiconductor over the active layer. In the method of production, the growing temperature at the second stage is higher than 1200 °C and is equal to the growing temperature at the first stage or above it.
EFFECT: disclosed is a method of producing a nitride semiconductor emitting an ultraviolet radiation element and a nitride semiconductor emitting an ultraviolet radiation element.
15 cl, 6 dwg
