METHOD FOR ION ALLOYING OF p-n BARRIER AREAS OF SEMICONDUCTOR INSTRUMENTS AND INTEGRATED CIRCUITS WITH BORON Russian patent published in 2010 - IPC H01L21/265 

FIELD: electricity.

SUBSTANCE: method for ion alloying of p-n barrier areas in semiconductor instruments and integrated circuits with boron includes oxidation of silicon plates, etching-out of windows in masking layer of silicon oxide and ion alloying of p-n barrier areas with boron with further activation of boron admixtures. Specific features of method are as follows: a layer of silicon oxide is developed in etched windows. Then prior to ion alloying of p-n barrier areas with boron, silicon nitride is deposited not only onto oxidised surface of silicon plates, but also onto a layer of silicon oxide developed in etched windows, at the same time, value of total thickness of silicon oxide and silicon nitride in etched windows and value of alloying energy are in a certain ratio between each other.

EFFECT: improved electric characteristics of semiconductor instruments and integrated circuits.

1 dwg