METHOD FOR MANUFACTURING OF ELECTRONIC EMISSION DEVICE, SOURCE OF ELECTRONS THAT USES IT, DEVICE OF IMAGE GENERATION AND DEVICE OF INFORMATION DISPLAY AND REPRODUCTION Russian patent published in 2010 - IPC H01J9/12 H01J9/18 H01J9/20 

Abstract RU 2399983 C2

FIELD: electricity.

SUBSTANCE: method for manufacturing of electronic emission device includes deposition of the first and second electroconductive films, opposite to each other, to generate gap between end sections of the first and second electroconductive films. End of the first electroconductive film includes a section, minimum distance d1 from which to the second electroconductive film is equal to 10 nm or less. Let d2 stand for minimum distance between end of the first electroconductive film, which is distant from the section, minimum distance d1 from which to the second electroconductive film equals 10 nm or less, by minimum distance d1, and end of the second electroconductive film. Ratio d2/d1≥1.2 is maintained.

EFFECT: development of electronic emission device with high efficiency of electronic emission, which provides for satisfactory characteristics of electronic emission for a long time, and source of electrons, and device of image generation that uses it.

7 cl, 58 dwg, 6 tbl, 5 ex

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RU 2 399 983 C2

Authors

Nukanobu Koki

Moriguti Takuto

Jamamoto Kejsuke

Dates

2010-09-20Published

2008-12-03Filed